Energie- und Elektrotechnik

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  • Tabular layouts of article characteristics for transistors and thyristors

    Standard [CURRENT] 1988-12

    DIN 4000-19:1988-12

    Tabular layouts of article characteristics for transistors and thyristors

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  • Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006

    Standard [CURRENT] 2007-01

    DIN EN 62373:2007-01

    Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006

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  • Semiconductor devices - Hot carrier test on MOS transistors (IEC 62416:2010); German version EN 62416:2010

    Standard [CURRENT] 2010-12

    DIN EN 62416:2010-12

    Semiconductor devices - Hot carrier test on MOS transistors (IEC 62416:2010); German version EN 62416:2010

    This document specifies a wafer level (Hot carrier) test for "hot" carriers on NMOS and PMOS transistors. The test has been prepared to determine whether the single transistors in a certain ©MOS ...

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  • Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices (IEC 63373:2022); German version EN IEC 63373:2022

    Standard [CURRENT] 2023-08

    DIN EN IEC 63373:2023-08

    Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices (IEC 63373:2022); German version EN IEC 63373:2022

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  • Blank detail specification - Phototransistors, photodarlington transistors, phototransistor arrays; German version EN 120003:1992

    Standard [CURRENT] 1996-11

    DIN EN 120003:1996-11

    Blank detail specification - Phototransistors, photodarlington transistors, phototransistor arrays; German version EN 120003:1992

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  • Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006)

    Standard [CURRENT] 2007-03-01

    OEVE/OENORM EN 62373:2007-03-01

    Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006)

    from 104.29 EUR VAT included

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  • Semiconductor devices - Hot carrier test on MOS transistors (IEC 62416:2010) (german version)

    Standard [CURRENT] 2011-01-01

    OEVE/OENORM EN 62416:2011-01-01

    Semiconductor devices - Hot carrier test on MOS transistors (IEC 62416:2010) (german version)

    from 104.29 EUR VAT included

    from 97.47 EUR VAT excluded

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  • Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices

    Standard [CURRENT] 2022-03

    SN EN IEC 63373:2022-03

    Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices

    29.00 EUR VAT included

    27.10 EUR VAT excluded

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  • Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

    Standard [CURRENT] 2006-08

    SN EN 62373:2006-08

    Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

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    from 20.00 EUR VAT excluded

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  • Semiconductor devices - Hot carrier test on MOS transistors

    Standard [CURRENT] 2010-06

    SN EN 62416:2010-06

    Semiconductor devices - Hot carrier test on MOS transistors

    from 26.10 EUR VAT included

    from 24.39 EUR VAT excluded

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