Semiconductor devices - Hot carrier test on MOS transistors (IEC 62416:2010); German version EN 62416:2010

Standard [CURRENT]

DIN EN 62416:2010-12

Semiconductor devices - Hot carrier test on MOS transistors (IEC 62416:2010); German version EN 62416:2010

German title
Halbleiterbauelemente - Hot-Carrier-Prüfverfahren für MOS-Transistoren (IEC 62416:2010); Deutsche Fassung EN 62416:2010
Publication date
2010-12
Original language
German
Pages
12

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Publication date
2010-12
Original language
German
Pages
12
DOI
https://dx.doi.org/10.31030/1718572
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Overview

This document specifies a wafer level (Hot carrier) test for "hot" carriers on NMOS and PMOS transistors. The test has been prepared to determine whether the single transistors in a certain ©MOS process meet the required hot carrier lifetime. The responsible Committee is K 631 "Halbleiterbauelemente" ("Semiconductor devices") of the DKE (German Commission for Electrical, Electronic and Information Technologies) at DIN and VDE.

ICS

31.080.30

DOI

https://dx.doi.org/10.31030/1718572

Cooperation at DIN

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